JCS2N60N Datasheet: MOSFET, N-Ch, 600V, 0.8A. Full specification with pinout and replacement list

JCS2N60N Datasheet. Specs and Replacement

Type Designator: JCS2N60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 139 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: SOT223

JCS2N60N substitution

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JCS2N60N datasheet

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R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c... See More ⇒

7.3. Size:1742K jilin sino
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R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES ... See More ⇒