JCS2N70R Datasheet and Replacement
Type Designator: JCS2N70R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 52 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: DPAK
JCS2N70R substitution
JCS2N70R Datasheet (PDF)
jcs2n70v jcs2n70r 2n70nl.pdf

N RN-CHANNEL MOSFET JCS2N70C Package MAIN CHARACTERISTICS ID 2A VDSS 700 V Rdson-max 6.5 Vgs=10V Qg-typ 10.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge U
jcs2n70mfh jcs2n70vh jcs2n70rh jcs2n70ch jcs2n70fh.pdf

N RN-CHANNEL MOSFET JCS2N70H Package MAIN CHARACTERISTICS ID 2A VDSS 700 V Rdson-max 6.5 Vgs=10V Qg-typ 8.0nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP
jcs2n60.pdf

N lSX:_W:WHe^vfSO{ RN-CHANNEL MOSFET JCS2N60 ;NSpe MAIN CHARACTERISTICS \ Package ID 2.0 A VDSS 600 V Rdson 5 @Vgs=10VQg 15.3 nC APPLICATIONS (u l High frequency switching
jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c
Datasheet: JCS18N50WE , JCS20N60WH , JCS20N65FEI , JCS22N50ABC , JCS22N50FC , JCS22N50WC , JCS2N60N , JCS2N65FC , TK10A60D , JCS2N70V , JCS2N95RA , JCS2N95VA , JCS33N25CT , JCS3N80B , JCS3N80C , JCS3N80F , JCS3N80R .
History: STW26NM60ND
Keywords - JCS2N70R MOSFET datasheet
JCS2N70R cross reference
JCS2N70R equivalent finder
JCS2N70R lookup
JCS2N70R substitution
JCS2N70R replacement
History: STW26NM60ND



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