JCS3N80B Datasheet. Specs and Replacement

Type Designator: JCS3N80B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.62 Ohm

Package: TO262

JCS3N80B substitution

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JCS3N80B datasheet

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JCS3N80B

N R N-CHANNEL MOSFET JCS3N80C Package MAIN CHARACTERISTICS ID 3.0 A VDSS 800 V Rdson-max 4.9 Vgs=10V Qg-typ 15.4nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE... See More ⇒

Detailed specifications: JCS22N50WC, JCS2N60N, JCS2N65FC, JCS2N70R, JCS2N70V, JCS2N95RA, JCS2N95VA, JCS33N25CT, IRFB3607, JCS3N80C, JCS3N80F, JCS3N80R, JCS3N80S, JCS3N80V, JCS40N25ANT, JCS40N25FC, JCS40N25SC

Keywords - JCS3N80B MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.