All MOSFET. JCS640SH Datasheet

 

JCS640SH Datasheet and Replacement


   Type Designator: JCS640SH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38.7 nS
   Cossⓘ - Output Capacitance: 173 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO263
 

 JCS640SH substitution

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JCS640SH Datasheet (PDF)

 ..1. Size:1803K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf pdf_icon

JCS640SH

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 7.1. Size:1439K  jilin sino
 jcs640s jcs640c jcs640f.pdf pdf_icon

JCS640SH

N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 8.1. Size:1405K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh.pdf pdf_icon

JCS640SH

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

Datasheet: JCS5AN50F , JCS5AN50R , JCS5AN50V , JCS60N10I , JCS620CT , JCS620FT , JCS620RT , JCS620VT , MMIS60R580P , JCS6AN135ABA , JCS6AN135WA , JCS6AN70F , JCS6AN70R , JCS6AN70V , JCS6N70VC , JCS6N90BA , JCS6N90CA .

History: RP1E125XN

Keywords - JCS640SH MOSFET datasheet

 JCS640SH cross reference
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