JCS6AN135ABA MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS6AN135ABA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 498 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58.1 nC
trⓘ - Rise Time: 52.2 nS
Cossⓘ - Output Capacitance: 205 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO3PB
JCS6AN135ABA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS6AN135ABA Datasheet (PDF)
jcs6an135aba jcs6an135wa.pdf
N RN-CHANNEL MOSFET JCS6AN135A MAIN CHARACTERISTICS Package ID 6 A VDSS 1350 V RdsonVgs=10V 3.5 -MAX Qg-Typ 58.1 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge power supplies
jcs6an70v jcs6an70r jcs6an70f.pdf
N RN-CHANNEL MOSFET JCS6AN70E Package MAIN CHARACTERISTICS ID 6A VDSS 700V Rdson-max 1.70 Vgs=10V Qg-Typ 21.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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