All MOSFET. JCS6AN135ABA Datasheet

 

JCS6AN135ABA Datasheet and Replacement


   Type Designator: JCS6AN135ABA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 498 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1350 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 52.2 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO3PB
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JCS6AN135ABA Datasheet (PDF)

 ..1. Size:1043K  jilin sino
 jcs6an135aba jcs6an135wa.pdf pdf_icon

JCS6AN135ABA

N RN-CHANNEL MOSFET JCS6AN135A MAIN CHARACTERISTICS Package ID 6 A VDSS 1350 V RdsonVgs=10V 3.5 -MAX Qg-Typ 58.1 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge power supplies

 8.1. Size:1142K  jilin sino
 jcs6an70v jcs6an70r jcs6an70f.pdf pdf_icon

JCS6AN135ABA

N RN-CHANNEL MOSFET JCS6AN70E Package MAIN CHARACTERISTICS ID 6A VDSS 700V Rdson-max 1.70 Vgs=10V Qg-Typ 21.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TPW60R080M | FCPF7N60YDTU | BL2N60-U | IRFP352R

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