All MOSFET. JCS6AN70V Datasheet

 

JCS6AN70V MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS6AN70V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.1 nC
   trⓘ - Rise Time: 28.4 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: IPAK

 JCS6AN70V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS6AN70V Datasheet (PDF)

 ..1. Size:1142K  jilin sino
 jcs6an70v jcs6an70r jcs6an70f.pdf

JCS6AN70V JCS6AN70V

N RN-CHANNEL MOSFET JCS6AN70E Package MAIN CHARACTERISTICS ID 6A VDSS 700V Rdson-max 1.70 Vgs=10V Qg-Typ 21.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 8.1. Size:1043K  jilin sino
 jcs6an135aba jcs6an135wa.pdf

JCS6AN70V JCS6AN70V

N RN-CHANNEL MOSFET JCS6AN135A MAIN CHARACTERISTICS Package ID 6 A VDSS 1350 V RdsonVgs=10V 3.5 -MAX Qg-Typ 58.1 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge power supplies

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top