JCS70N30WC MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS70N30WC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 446 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 115.1 nC
trⓘ - Rise Time: 227.2 nS
Cossⓘ - Output Capacitance: 963 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO247
JCS70N30WC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS70N30WC Datasheet (PDF)
..1. Size:911K jilin sino
jcs70n30wc jcs70n30abc.pdf
jcs70n30wc jcs70n30abc.pdf
N RN-CHANNEL MOSFET JCS70N30C MAIN CHARACTERISTICS Package ID 70 A VDSS 300 V RdsonVgs=10V 40m -MAX Qg-Typ 115.1 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge UPS power supp
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