JCS7N120ABA Datasheet. Specs and Replacement

Type Designator: JCS7N120ABA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 484 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 229 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO3PB

JCS7N120ABA substitution

- MOSFET ⓘ Cross-Reference Search

 

JCS7N120ABA datasheet

 ..1. Size:887K  jilin sino
jcs7n120aba jcs7n120wa.pdf pdf_icon

JCS7N120ABA

N R N-CHANNEL MOSFET JCS7N120A MAIN CHARACTERISTICS Package ID 7 A VDSS 1200 V Rdson Vgs=10V 1.5 -MAX Qg-Typ 61.13 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power supp... See More ⇒

 9.1. Size:1944K  jilin sino
jcs7n70v jcs7n70r jcs7n70c jcs7n70f jcs7n70s jcs7n70b.pdf pdf_icon

JCS7N120ABA

N R N-CHANNEL MOSFET JCS7N70C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR... See More ⇒

 9.3. Size:1165K  jilin sino
jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf pdf_icon

JCS7N120ABA

N R N-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po... See More ⇒

Detailed specifications: JCS6N70VC, JCS6N90BA, JCS6N90CA, JCS6N90FA, JCS6N90GDA, JCS6N90SA, JCS70N30ABC, JCS70N30WC, K2611, JCS7N120WA, JCS7N60R, JCS7N60V, JCS7N65BE, JCS7N65CE, JCS7N65FE, JCS7N65RE, JCS7N65SE

Keywords - JCS7N120ABA MOSFET specs

 JCS7N120ABA cross reference

 JCS7N120ABA equivalent finder

 JCS7N120ABA pdf lookup

 JCS7N120ABA substitution

 JCS7N120ABA replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility