Справочник MOSFET. JCS7N120ABA

 

JCS7N120ABA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: JCS7N120ABA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 484 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 61.13 nC
   trⓘ - Время нарастания: 51 ns
   Cossⓘ - Выходная емкость: 229 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO3PB

 Аналог (замена) для JCS7N120ABA

 

 

JCS7N120ABA Datasheet (PDF)

 ..1. Size:887K  jilin sino
jcs7n120aba jcs7n120wa.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N120A MAIN CHARACTERISTICS Package ID 7 A VDSS 1200 V RdsonVgs=10V 1.5 -MAX Qg-Typ 61.13 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power supp

 9.1. Size:1944K  jilin sino
jcs7n70v jcs7n70r jcs7n70c jcs7n70f jcs7n70s jcs7n70b.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N70C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR

 9.2. Size:755K  jilin sino
jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf

JCS7N120ABA
JCS7N120ABA

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch

 9.3. Size:1165K  jilin sino
jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po

 9.4. Size:600K  jilin sino
jcs7n65.pdf

JCS7N120ABA
JCS7N120ABA

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch

 9.5. Size:904K  jilin sino
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 9.6. Size:1105K  jilin sino
jcs7n95fa jcs7n95ca jcs7n95sa jcs7n95aba.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N95A Package MAIN CHARACTERISTICS 7A ID 950 V VDSS Rdson-Max 1.5 @Vgs=10VQg-typ 42.48nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 9.7. Size:1774K  jilin sino
jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max1.0 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.8. Size:757K  jilin sino
jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.9. Size:2018K  jilin sino
jcs7n65ve jcs7n65re jcs7n65ce jcs7n65se jcs7n65be jcs7n65fe.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max1.1 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.10. Size:667K  jilin sino
jcs7n80fc.pdf

JCS7N120ABA
JCS7N120ABA

N R N-CHANNEL MOSFET JCS7N80C Package MAIN CHARACTERISTICS 7A ID 800 V VDSS Rdson-max 1.8 @Vgs=10VQg-typ 32nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 9.11. Size:1228K  jilin sino
jcs7n70fe.pdf

JCS7N120ABA
JCS7N120ABA

N RN-CHANNEL MOSFET JCS7N70FE Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max(@Vgs=10V) 1.35 Qg-typ 25.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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