All MOSFET. JCS7N65FE Datasheet

 

JCS7N65FE Datasheet and Replacement


   Type Designator: JCS7N65FE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33.6 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F
 

 JCS7N65FE substitution

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JCS7N65FE Datasheet (PDF)

 ..1. Size:2018K  jilin sino
 jcs7n65ve jcs7n65re jcs7n65ce jcs7n65se jcs7n65be jcs7n65fe.pdf pdf_icon

JCS7N65FE

N RN-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max1.1 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 6.1. Size:757K  jilin sino
 jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf pdf_icon

JCS7N65FE

N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 7.1. Size:600K  jilin sino
 jcs7n65.pdf pdf_icon

JCS7N65FE

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch

 8.1. Size:755K  jilin sino
 jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf pdf_icon

JCS7N65FE

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch

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Datasheet: JCS70N30ABC , JCS70N30WC , JCS7N120ABA , JCS7N120WA , JCS7N60R , JCS7N60V , JCS7N65BE , JCS7N65CE , AO4468 , JCS7N65RE , JCS7N65SE , JCS7N65VE , JCS7N70B , JCS7N70C , JCS7N70F , JCS7N70FE , JCS7N70R .

History: SM6008NF | 2SK1813 | HAT2174N

Keywords - JCS7N65FE MOSFET datasheet

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