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FDY302NZ Specs and Replacement

Type Designator: FDY302NZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT523F

FDY302NZ substitution

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FDY302NZ datasheet

 ..1. Size:213K  fairchild semi
fdy302nz.pdf pdf_icon

FDY302NZ

July 2006 FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 300 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 500 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @VGS =2.5V. Applications ESD protection diode (n... See More ⇒

 ..2. Size:376K  onsemi
fdy302nz.pdf pdf_icon

FDY302NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:373K  fairchild semi
fdy3000nz.pdf pdf_icon

FDY302NZ

January 2007 January 2007 tm FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protect... See More ⇒

 9.2. Size:222K  fairchild semi
fdy301nz.pdf pdf_icon

FDY302NZ

January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 200 mA, 20 V RDS(ON) = 5 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 7 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protection... See More ⇒

Detailed specifications: FDY1002PZ, FDY100PZ, FDY101PZ, FDY102PZ, FDY2000PZ, FDY3000NZ, FDY300NZ, FDY301NZ, 2SK3878, FDY4000CZ, SDT02N02, FDZ1905PZ, FDZ191P, FDZ192NZ, FDZ193P, FDZ197PZ, FDZ371PZ

Keywords - FDY302NZ MOSFET specs

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