FDY302NZ - описание и поиск аналогов

 

FDY302NZ. Аналоги и основные параметры

Наименование производителя: FDY302NZ

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm

Тип корпуса: SOT523F

Аналог (замена) для FDY302NZ

- подборⓘ MOSFET транзистора по параметрам

 

FDY302NZ даташит

 ..1. Size:213K  fairchild semi
fdy302nz.pdfpdf_icon

FDY302NZ

July 2006 FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 300 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 500 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @VGS =2.5V. Applications ESD protection diode (n

 ..2. Size:376K  onsemi
fdy302nz.pdfpdf_icon

FDY302NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:373K  fairchild semi
fdy3000nz.pdfpdf_icon

FDY302NZ

January 2007 January 2007 tm FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protect

 9.2. Size:222K  fairchild semi
fdy301nz.pdfpdf_icon

FDY302NZ

January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 200 mA, 20 V RDS(ON) = 5 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 7 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protection

Другие MOSFET... FDY1002PZ , FDY100PZ , FDY101PZ , FDY102PZ , FDY2000PZ , FDY3000NZ , FDY300NZ , FDY301NZ , 2SK3878 , FDY4000CZ , SDT02N02 , FDZ1905PZ , FDZ191P , FDZ192NZ , FDZ193P , FDZ197PZ , FDZ371PZ .

History: IRL3715ZLPBF | IRL1104LPBF

 

 

 

 

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