JCS86N25ABT Datasheet. Specs and Replacement

Type Designator: JCS86N25ABT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 788 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120.6 nS

Cossⓘ - Output Capacitance: 734 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO3PB

JCS86N25ABT substitution

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JCS86N25ABT datasheet

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JCS86N25ABT

N R N-CHANNEL MOSFET JCS86N25T MAIN CHARACTERISTICS Package ID 86 A VDSS 250 V Rdson Vgs=10V 50m -MAX Qg-Typ 123 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge UPS power suppli... See More ⇒

Detailed specifications: JCS7N70V, JCS7N80FC, JCS7N95ABA, JCS7N95CA, JCS7N95FA, JCS7N95SA, JCS80N08I, JCS80N10I, IRF640N, JCS86N25GCT, JCS86N25WT, JCS90N10I, JCS9AN50CC, JCS9AN50FC, JCS9AN50RC, JCS9AN50VC, JCS9N95CA

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