JCS86N25WT MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS86N25WT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 788 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 86 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 123 nC
trⓘ - Rise Time: 120.6 nS
Cossⓘ - Output Capacitance: 734 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO247
JCS86N25WT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS86N25WT Datasheet (PDF)
jcs86n25wt jcs86n25abt jcs86n25gct.pdf
N RN-CHANNEL MOSFET JCS86N25T MAIN CHARACTERISTICS Package ID 86 A VDSS 250 V RdsonVgs=10V 50m -MAX Qg-Typ 123 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge UPS power suppli
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: NCE60NF019T