JCS90N10I MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS90N10I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 98 nC
trⓘ - Rise Time: 117 nS
Cossⓘ - Output Capacitance: 750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO220
JCS90N10I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS90N10I Datasheet (PDF)
..1. Size:668K jilin sino
jcs90n10i.pdf
jcs90n10i.pdf
N RN-CHANNEL MOSFET JCS90N10I Package MAIN CHARACTERISTICS ID 90A VDSS 100V Rdson-typ - 7.0m (@Vgs=10V Qg-typ 98nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti
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