All MOSFET. JCS9AN50FC Datasheet

 

JCS9AN50FC MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS9AN50FC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.9 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 121 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F

 JCS9AN50FC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS9AN50FC Datasheet (PDF)

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 jcs9an50vc jcs9an50rc jcs9an50cc jcs9an50fc.pdf

JCS9AN50FC JCS9AN50FC

N RN-CHANNEL MOSFET JCS9AN50C MAIN CHARACTERISTICS Package ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEAT

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SVF8N60F

 

 
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