MC08N005R Datasheet. Specs and Replacement
Type Designator: MC08N005R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 135 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 81.4 nS
Cossⓘ - Output Capacitance: 665 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO263
MC08N005R substitution
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MC08N005R datasheet
mc08n005c mc08n005s mc08n005r.pdf
N N-CHANNEL MOSFET MC08N005 MAIN CHARACTERISTICS Package ID 135A VDSS 85V Rdson_max 5.5m Vgs=10V Qg-typ 74.6nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/D... See More ⇒
Detailed specifications: JCS9AN50CC, JCS9AN50FC, JCS9AN50RC, JCS9AN50VC, JCS9N95CA, JCS9N95FA, JCS9N95WA, MC08N005C, IRFP250N, MC08N005S, MC10N005, MC10N006, MC10N007L, MC10N020, MC10N020AL, MC11N005, MG065R060
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