MP18N50EIC MOSFET. Datasheet pdf. Equivalent
Type Designator: MP18N50EIC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 273 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67.8 nC
trⓘ - Rise Time: 83.6 nS
Cossⓘ - Output Capacitance: 283 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO220
MP18N50EIC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MP18N50EIC Datasheet (PDF)
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N N- CHANNEL MOSFET RMP18N50EI MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 67.8nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
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