MP18N50EIC datasheet, подбор замены

 ..1. Size:910K  jilin sino
 mp18n50eif mp18n50eic.pdf 

N N- CHANNEL MOSFET R MP18N50EI MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 67.8nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.1. Size:591K  trinnotech
 tmp18n20z tmpf18n20z.pdf 

TMP18N20Z(G)/TMPF18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A

 9.2. Size:708K  way-on
 wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf 

WML18 WMK18N7 8N70EM, W 70EM, WMM18N70EM WMN18 WMP18N7 8N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is

 9.3. Size:708K  way-on
 wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf 

WML18 WMK18N6 8N65EM, W 65EM, WMM18N65EM WMN18 WMP18N6 8N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is

 9.4. Size:618K  cn minos
 mp18n20 mpf18n20 mdp18n20 mdt18n20.pdf 

Description MP18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 18 A D R 0.13 DS(ON).Typ