All MOSFET. MP7AN65EC Datasheet

 

MP7AN65EC MOSFET. Datasheet pdf. Equivalent


   Type Designator: MP7AN65EC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 30.2 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO220

 MP7AN65EC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MP7AN65EC Datasheet (PDF)

 ..1. Size:1720K  jilin sino
mp7an65ev mp7an65er mp7an65ec mp7an65ef.pdf

MP7AN65EC MP7AN65EC

N RN-CHANNEL MOSFET MP7AN65E Package MAIN CHARACTERISTICS ID 7A VDSS 650V Rdson-max 1.25 Vgs=10V Qg-Typ 20nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top