MP7AN65EC Datasheet. Specs and Replacement
Type Designator: MP7AN65EC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30.2 nS
Cossⓘ - Output Capacitance: 92 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220
MP7AN65EC substitution
- MOSFET ⓘ Cross-Reference Search
MP7AN65EC datasheet
mp7an65ev mp7an65er mp7an65ec mp7an65ef.pdf
N R N-CHANNEL MOSFET MP7AN65E Package MAIN CHARACTERISTICS ID 7A VDSS 650V Rdson-max 1.25 Vgs=10V Qg-Typ 20nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED ... See More ⇒
Detailed specifications: MP15N60EIS, MP18N50EIC, MP18N50EIF, MP20N60EI, MP2N60ER, MP4N150, MP4N50FR, MP4N60ER, AON7506, MP7AN65EF, MP7AN65ER, MP7AN65EV, MP88N25C, MP9N150, MS65R120C, MS65R120F, MS65R120GE
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