MP7AN65EC MOSFET. Datasheet pdf. Equivalent
Type Designator: MP7AN65EC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 30.2 nS
Cossⓘ - Output Capacitance: 92 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220
MP7AN65EC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MP7AN65EC Datasheet (PDF)
mp7an65ev mp7an65er mp7an65ec mp7an65ef.pdf
N RN-CHANNEL MOSFET MP7AN65E Package MAIN CHARACTERISTICS ID 7A VDSS 650V Rdson-max 1.25 Vgs=10V Qg-Typ 20nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: TK16N60W
History: TK16N60W
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918