All MOSFET. MP7AN65EV Datasheet

 

MP7AN65EV MOSFET. Datasheet pdf. Equivalent


   Type Designator: MP7AN65EV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 30.2 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: IPAK

 MP7AN65EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MP7AN65EV Datasheet (PDF)

 ..1. Size:1720K  jilin sino
 mp7an65ev mp7an65er mp7an65ec mp7an65ef.pdf

MP7AN65EV MP7AN65EV

N RN-CHANNEL MOSFET MP7AN65E Package MAIN CHARACTERISTICS ID 7A VDSS 650V Rdson-max 1.25 Vgs=10V Qg-Typ 20nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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