MP7AN65EV Datasheet. Specs and Replacement

Type Designator: MP7AN65EV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.2 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: IPAK

MP7AN65EV substitution

- MOSFET ⓘ Cross-Reference Search

 

MP7AN65EV datasheet

 ..1. Size:1720K  jilin sino
 mp7an65ev mp7an65er mp7an65ec mp7an65ef.pdf pdf_icon

MP7AN65EV

N R N-CHANNEL MOSFET MP7AN65E Package MAIN CHARACTERISTICS ID 7A VDSS 650V Rdson-max 1.25 Vgs=10V Qg-Typ 20nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED ... See More ⇒

Detailed specifications: MP20N60EI, MP2N60ER, MP4N150, MP4N50FR, MP4N60ER, MP7AN65EC, MP7AN65EF, MP7AN65ER, TK10A60D, MP88N25C, MP9N150, MS65R120C, MS65R120F, MS65R120GE, MS65R120S, MS65R135R, MS65R170B

Keywords - MP7AN65EV MOSFET specs

 MP7AN65EV cross reference

 MP7AN65EV equivalent finder

 MP7AN65EV pdf lookup

 MP7AN65EV substitution

 MP7AN65EV replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.