All MOSFET. MP7AN65EV Datasheet

 

MP7AN65EV Datasheet and Replacement


   Type Designator: MP7AN65EV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30.2 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: IPAK
 

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MP7AN65EV Datasheet (PDF)

 ..1. Size:1720K  jilin sino
 mp7an65ev mp7an65er mp7an65ec mp7an65ef.pdf pdf_icon

MP7AN65EV

N RN-CHANNEL MOSFET MP7AN65E Package MAIN CHARACTERISTICS ID 7A VDSS 650V Rdson-max 1.25 Vgs=10V Qg-Typ 20nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

Datasheet: MP20N60EI , MP2N60ER , MP4N150 , MP4N50FR , MP4N60ER , MP7AN65EC , MP7AN65EF , MP7AN65ER , IRFZ24N , MP88N25C , MP9N150 , MS65R120C , MS65R120F , MS65R120GE , MS65R120S , MS65R135R , MS65R170B .

History: SM6008NF | HAT2174N | AP60SL600AIN | DH045N06E | 2SK1813

Keywords - MP7AN65EV MOSFET datasheet

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