All MOSFET. FDZ197PZ Datasheet

 

FDZ197PZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDZ197PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: WLCSP

 FDZ197PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDZ197PZ Datasheet (PDF)

 ..1. Size:289K  fairchild semi
 fdz197pz.pdf

FDZ197PZ FDZ197PZ

June 2009FDZ197PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mFeatures General Description Max rDS(on) = 64 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 71 m at VGS = -2.5 V, ID = -2.0 AFDZ197PZ minimizes both PCB

 9.1. Size:248K  fairchild semi
 fdz191p.pdf

FDZ197PZ FDZ197PZ

June 2009FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m Features General DescriptionDesigned on Fairchild's advanced 1.5V PowerTrench process Max rDS(on) = 85m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 123m at VGS = -2.5V, ID = -1AFDZ191P minimizes both PCB space and rDS(on). This advanced WL

 9.2. Size:292K  fairchild semi
 fdz1905pz.pdf

FDZ197PZ FDZ197PZ

July 2008FDZ1905PZtmCommon Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET 20V, 3A, 123mFeatures General DescriptionThis device is designed specifically as a single package solution Max rS1S2(on) = 126m at VGS = 4.5V, IS1S2 = 1Afor the battery charge switch in cellular handset and other Max rS1S2(on) = 141m at VGS = 2.5V, IS1S2 = 1Aultra-portab

 9.3. Size:303K  fairchild semi
 fdz192nz.pdf

FDZ197PZ FDZ197PZ

January 2010FDZ192NZN-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mFeatures General Description Max rDS(on) = 39 m at VGS = 4.5 V, ID = 2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 43 m at VGS = 2.5 V, ID = 2.0 AFDZ192NZ minimizes both PCB sp

 9.4. Size:239K  fairchild semi
 fdz193p.pdf

FDZ197PZ FDZ197PZ

June 2009FDZ193PtmP-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mFeatures General DescriptionDesigned on Fairchild's advanced 1.7V PowerTrench process Max rDS(on) = 90m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 130m at VGS = -2.5V, ID = -1AFDZ193P minimizes both PCB space and rDS(on). This adva

 9.5. Size:318K  onsemi
 fdz1905pz.pdf

FDZ197PZ FDZ197PZ

MOSFET P-Channel,POWERTRENCH), CommonDrain: 1.5 V, WLCSP-20 V, -3 A, 126 mWFDZ1905PZwww.onsemi.comGeneral DescriptionThis device is designed specifically as a single package solution forS1the battery charge switch in cellular handset and other ultra-portableapplications. It features two common drain P-channel MOSFETs,which enables bidirectional current flow, on ON Semi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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