Справочник MOSFET. FDZ197PZ

 

FDZ197PZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDZ197PZ
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.064 Ohm
   Тип корпуса: WLCSP

 Аналог (замена) для FDZ197PZ

 

 

FDZ197PZ Datasheet (PDF)

 ..1. Size:289K  fairchild semi
 fdz197pz.pdf

FDZ197PZ FDZ197PZ

June 2009FDZ197PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mFeatures General Description Max rDS(on) = 64 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 71 m at VGS = -2.5 V, ID = -2.0 AFDZ197PZ minimizes both PCB

 9.1. Size:248K  fairchild semi
 fdz191p.pdf

FDZ197PZ FDZ197PZ

June 2009FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m Features General DescriptionDesigned on Fairchild's advanced 1.5V PowerTrench process Max rDS(on) = 85m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 123m at VGS = -2.5V, ID = -1AFDZ191P minimizes both PCB space and rDS(on). This advanced WL

 9.2. Size:292K  fairchild semi
 fdz1905pz.pdf

FDZ197PZ FDZ197PZ

July 2008FDZ1905PZtmCommon Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET 20V, 3A, 123mFeatures General DescriptionThis device is designed specifically as a single package solution Max rS1S2(on) = 126m at VGS = 4.5V, IS1S2 = 1Afor the battery charge switch in cellular handset and other Max rS1S2(on) = 141m at VGS = 2.5V, IS1S2 = 1Aultra-portab

 9.3. Size:303K  fairchild semi
 fdz192nz.pdf

FDZ197PZ FDZ197PZ

January 2010FDZ192NZN-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mFeatures General Description Max rDS(on) = 39 m at VGS = 4.5 V, ID = 2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 43 m at VGS = 2.5 V, ID = 2.0 AFDZ192NZ minimizes both PCB sp

 9.4. Size:239K  fairchild semi
 fdz193p.pdf

FDZ197PZ FDZ197PZ

June 2009FDZ193PtmP-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mFeatures General DescriptionDesigned on Fairchild's advanced 1.7V PowerTrench process Max rDS(on) = 90m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 130m at VGS = -2.5V, ID = -1AFDZ193P minimizes both PCB space and rDS(on). This adva

 9.5. Size:318K  onsemi
 fdz1905pz.pdf

FDZ197PZ FDZ197PZ

MOSFET P-Channel,POWERTRENCH), CommonDrain: 1.5 V, WLCSP-20 V, -3 A, 126 mWFDZ1905PZwww.onsemi.comGeneral DescriptionThis device is designed specifically as a single package solution forS1the battery charge switch in cellular handset and other ultra-portableapplications. It features two common drain P-channel MOSFETs,which enables bidirectional current flow, on ON Semi

Другие MOSFET... FDY301NZ , FDY302NZ , FDY4000CZ , SDT02N02 , FDZ1905PZ , FDZ191P , FDZ192NZ , FDZ193P , 20N50 , FDZ371PZ , FDZ372NZ , FDZ375P , FDZ391P , FQA10N80CF109 , SDF08N50 , FQA11N90F109 , FQA11N90CF109 .

 

 
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