FDZ197PZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDZ197PZ
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.9 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 3.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 18 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.064 Ohm
Тип корпуса: WLCSP
FDZ197PZ Datasheet (PDF)
fdz197pz.pdf
June 2009FDZ197PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mFeatures General Description Max rDS(on) = 64 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 71 m at VGS = -2.5 V, ID = -2.0 AFDZ197PZ minimizes both PCB
fdz191p.pdf
June 2009FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m Features General DescriptionDesigned on Fairchild's advanced 1.5V PowerTrench process Max rDS(on) = 85m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 123m at VGS = -2.5V, ID = -1AFDZ191P minimizes both PCB space and rDS(on). This advanced WL
fdz1905pz.pdf
July 2008FDZ1905PZtmCommon Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET 20V, 3A, 123mFeatures General DescriptionThis device is designed specifically as a single package solution Max rS1S2(on) = 126m at VGS = 4.5V, IS1S2 = 1Afor the battery charge switch in cellular handset and other Max rS1S2(on) = 141m at VGS = 2.5V, IS1S2 = 1Aultra-portab
fdz192nz.pdf
January 2010FDZ192NZN-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mFeatures General Description Max rDS(on) = 39 m at VGS = 4.5 V, ID = 2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 43 m at VGS = 2.5 V, ID = 2.0 AFDZ192NZ minimizes both PCB sp
fdz193p.pdf
June 2009FDZ193PtmP-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mFeatures General DescriptionDesigned on Fairchild's advanced 1.7V PowerTrench process Max rDS(on) = 90m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 130m at VGS = -2.5V, ID = -1AFDZ193P minimizes both PCB space and rDS(on). This adva
fdz1905pz.pdf
MOSFET P-Channel,POWERTRENCH), CommonDrain: 1.5 V, WLCSP-20 V, -3 A, 126 mWFDZ1905PZwww.onsemi.comGeneral DescriptionThis device is designed specifically as a single package solution forS1the battery charge switch in cellular handset and other ultra-portableapplications. It features two common drain P-channel MOSFETs,which enables bidirectional current flow, on ON Semi
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