MS65R190RGE Datasheet. Specs and Replacement

Type Designator: MS65R190RGE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO247

MS65R190RGE substitution

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MS65R190RGE datasheet

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Detailed specifications: MS65R120S, MS65R135R, MS65R170B, MS65R170C, MS65R170F, MS65R170GE, MS65R170S, MS65R190RF1, IRF520, MS65R360C, MS65R360F, MS65R360R, MS65R400RF, MS65R400RR, MS65R600F, MS65R600R, MS65R620RF

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