All MOSFET. MS65R360C Datasheet

 

MS65R360C Datasheet and Replacement


   Type Designator: MS65R360C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 129 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220
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MS65R360C Datasheet (PDF)

 ..1. Size:1088K  jilin sino
 ms65r360f ms65r360r ms65r360c.pdf pdf_icon

MS65R360C

N RN-CHANNEL MOSFET MS65R360 MAIN CHARACTERISTICS Package ID 11A VDSS 650 V Rdson-max 0.40 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.1. Size:863K  jilin sino
 ms65r600f ms65r600r.pdf pdf_icon

MS65R360C

N R N-CHANNEL MOSFET MS65R600 Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 600m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.2. Size:994K  jilin sino
 ms65r120f ms65r120ge ms65r120c ms65r120s.pdf pdf_icon

MS65R360C

N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.3. Size:1099K  jilin sino
 ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf pdf_icon

MS65R360C

N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

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Keywords - MS65R360C MOSFET datasheet

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