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MS65R360C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MS65R360C
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 129 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 11 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 40 ns
   Выходная емкость (Cd): 40 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
   Тип корпуса: TO220

 Аналог (замена) для MS65R360C

 

 

MS65R360C Datasheet (PDF)

 ..1. Size:1088K  jilin sino
ms65r360f ms65r360r ms65r360c.pdf

MS65R360C
MS65R360C

N RN-CHANNEL MOSFET MS65R360 MAIN CHARACTERISTICS Package ID 11A VDSS 650 V Rdson-max 0.40 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.1. Size:863K  jilin sino
ms65r600f ms65r600r.pdf

MS65R360C
MS65R360C

N R N-CHANNEL MOSFET MS65R600 Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 600m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.2. Size:994K  jilin sino
ms65r120f ms65r120ge ms65r120c ms65r120s.pdf

MS65R360C
MS65R360C

N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.3. Size:1099K  jilin sino
ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf

MS65R360C
MS65R360C

N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.4. Size:973K  jilin sino
ms65r190rf1 ms65r190rge.pdf

MS65R360C
MS65R360C

N RN-CHANNEL MOSFET MS65R190R Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.190 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.5. Size:913K  jilin sino
ms65r400rf ms65r400rr.pdf

MS65R360C
MS65R360C

N N-CHANNEL MOSFET RMS65R400R Package MAIN CHARACTERISTICS ID 11A VDSS 650 V Rdson-max 0.45 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.6. Size:887K  jilin sino
ms65r620rf ms65r620rr.pdf

MS65R360C
MS65R360C

N RN-CHANNEL MOSFET MS65R620R Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 620m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.7. Size:837K  jilin sino
ms65r135r.pdf

MS65R360C
MS65R360C

N RN-CHANNEL MOSFET MS65R135R Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.135 @Vgs=10V Qg-typ 60.2 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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