MS65R620RR MOSFET Datasheet: N-Ch, 650V, 7A. Full specification with pinout and replacement list

MS65R620RR Specs and Replacement

Type Designator: MS65R620RR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 14.6 nC

tr ⓘ - Rise Time: 33.8 nS

Cossⓘ - Output Capacitance: 27.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm

Package: DPAK

MS65R620RR substitution

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MS65R620RR datasheet

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N R N-CHANNEL MOSFET MS65R620R Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 620m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒

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N R N-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒

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