NCE01P13I
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE01P13I
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 32.5
nC
trⓘ - Rise Time: 52
nS
Cossⓘ -
Output Capacitance: 47.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
TO-251
NCE01P13I
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE01P13I
Datasheet (PDF)
..1. Size:739K ncepower
nce01p13i.pdf 
http://www.ncepower.comNCE01P13INCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P13I uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-13A Schematic diagramDS DR
6.1. Size:307K ncepower
nce01p13.pdf
NCE01P13http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)
6.2. Size:400K ncepower
nce01p13k.pdf
Pb Free Producthttp://www.ncepower.com NCE01P13KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)
7.1. Size:343K ncepower
nce01p18l.pdf
http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)
7.2. Size:562K ncepower
nce01p18d.pdf
http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)
7.3. Size:713K ncepower
nce01p18.pdf
http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR
7.4. Size:430K ncepower
nce01p18k.pdf
Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)
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