NCE01P13I Specs and Replacement

Type Designator: NCE01P13I

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 47.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-251

NCE01P13I substitution

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NCE01P13I datasheet

 ..1. Size:739K  ncepower
nce01p13i.pdf pdf_icon

NCE01P13I

http //www.ncepower.com NCE01P13I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13I uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-13A Schematic diagram DS D R ... See More ⇒

 6.1. Size:307K  ncepower
nce01p13.pdf pdf_icon

NCE01P13I

NCE01P13 http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON) ... See More ⇒

 6.2. Size:400K  ncepower
nce01p13k.pdf pdf_icon

NCE01P13I

Pb Free Product http //www.ncepower.com NCE01P13K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON) ... See More ⇒

 7.1. Size:343K  ncepower
nce01p18l.pdf pdf_icon

NCE01P13I

http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON) ... See More ⇒

Detailed specifications: NCE0157G, NCE0159, NCE0160AG, NCE0160G, NCE01H13D, NCE01NP03S, NCE01P05S, NCE01P13, P55NF06, NCE01P18, NCE01P18L, NCE01P30D, NCE01P30I, NCE01P30K, NCE01P30L, NCE01P35K, NCE0203S

Keywords - NCE01P13I MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.