NCE01P13I. Аналоги и основные параметры

Наименование производителя: NCE01P13I

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 52 ns

Cossⓘ - Выходная емкость: 47.5 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: TO-251

Аналог (замена) для NCE01P13I

- подборⓘ MOSFET транзистора по параметрам

 

NCE01P13I даташит

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NCE01P13I

http //www.ncepower.com NCE01P13I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13I uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-13A Schematic diagram DS D R

 6.1. Size:307K  ncepower
 nce01p13.pdf pdf_icon

NCE01P13I

NCE01P13 http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

 6.2. Size:400K  ncepower
 nce01p13k.pdf pdf_icon

NCE01P13I

Pb Free Product http //www.ncepower.com NCE01P13K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

 7.1. Size:343K  ncepower
 nce01p18l.pdf pdf_icon

NCE01P13I

http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

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