NCE01P35K MOSFET Datasheet: P-Ch, 100V, 35A. Full specification with pinout and replacement list

NCE01P35K Specs and Replacement

Type Designator: NCE01P35K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO252

NCE01P35K substitution

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NCE01P35K datasheet

..1. Size:790K ncepower
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http //www.ncepower.com NCE01P35K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P35K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-100V,I =-35A Schematic diagram DS D R ... See More ⇒

7.1. Size:670K ncepower
nce01p30k.pdf pdf_icon

http //www.ncepower.com NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-30A Schematic diagram DS D R ... See More ⇒

7.2. Size:316K ncepower
nce01p30i.pdf pdf_icon

http //www.ncepower.com NCE01P30I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON) ... See More ⇒

7.3. Size:341K ncepower
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