Справочник MOSFET. NCE01P35K

 

NCE01P35K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE01P35K
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: TO252

 Аналог (замена) для NCE01P35K

 

 

NCE01P35K Datasheet (PDF)

 ..1. Size:790K  ncepower
 nce01p35k.pdf

NCE01P35K NCE01P35K

http://www.ncepower.comNCE01P35KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P35K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-100V,I =-35A Schematic diagramDS DR

 7.1. Size:670K  ncepower
 nce01p30k.pdf

NCE01P35K NCE01P35K

http://www.ncepower.comNCE01P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-30A Schematic diagramDS DR

 7.2. Size:316K  ncepower
 nce01p30i.pdf

NCE01P35K NCE01P35K

http://www.ncepower.com NCE01P30INCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 7.3. Size:341K  ncepower
 nce01p30.pdf

NCE01P35K NCE01P35K

Pb Free Producthttp://www.ncepower.com NCE01P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 7.4. Size:297K  ncepower
 nce01p30l.pdf

NCE01P35K NCE01P35K

http://www.ncepower.com NCE01P30LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 7.5. Size:325K  ncepower
 nce01p30d.pdf

NCE01P35K NCE01P35K

http://www.ncepower.com NCE01P30DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)

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