NCE16P40Q Specs and Replacement

Type Designator: NCE16P40Q

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: DFN3.3X3.3-8L

NCE16P40Q substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE16P40Q datasheet

 ..1. Size:742K  ncepower
 nce16p40q.pdf pdf_icon

NCE16P40Q

http //www.ncepower.com NCE16P40Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE16P40Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -15A DS D or power management. R ... See More ⇒

 8.1. Size:738K  ncepower
 nce16p07j.pdf pdf_icon

NCE16P40Q

http //www.ncepower.com NCE16P07J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE16P07J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -16V,I = -... See More ⇒

 9.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

NCE16P40Q

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16... See More ⇒

 9.2. Size:320K  ncepower
 nce1608n.pdf pdf_icon

NCE16P40Q

http //www.ncepower.com NCE1608N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 16V,ID =8A ... See More ⇒

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Detailed specifications: NCE15P25I, NCE15P25J, NCE15P25JI, NCE15P25JK, NCE15P30, NCE15P30K, NCE1608N, NCE16P07J, 8N60, NCE1805S, NCE1810AK, NCE1826K, NCE2004Y, NCE2006Y, NCE2012, NCE2013J, NCE2014ES

Keywords - NCE16P40Q MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.