Справочник MOSFET. NCE16P40Q

 

NCE16P40Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE16P40Q
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 23 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 135 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: DFN3.3X3.3-8L

 Аналог (замена) для NCE16P40Q

 

 

NCE16P40Q Datasheet (PDF)

 ..1. Size:742K  ncepower
 nce16p40q.pdf

NCE16P40Q NCE16P40Q

http://www.ncepower.comNCE16P40QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE16P40Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -15ADS Dor power management.R

 8.1. Size:738K  ncepower
 nce16p07j.pdf

NCE16P40Q NCE16P40Q

http://www.ncepower.comNCE16P07JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE16P07J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -16V,I = -

 9.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf

NCE16P40Q NCE16P40Q

NCE160ED120VTP41200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 16

 9.2. Size:320K  ncepower
 nce1608n.pdf

NCE16P40Q NCE16P40Q

http://www.ncepower.com NCE1608NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 16V,ID =8A

 9.3. Size:1569K  ncepower
 nce160ed65vtp.pdf

NCE16P40Q NCE16P40Q

NCE160ED65VTP650V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC

 9.4. Size:1602K  ncepower
 nce160ed120vtp.pdf

NCE16P40Q NCE16P40Q

NCE160ED120VTP1200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 160

 9.5. Size:1532K  ncepower
 nce160ed65vtp4.pdf

NCE16P40Q NCE16P40Q

NCE160ED65VTP4650V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ I

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