NCE20P05J
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE20P05J
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 28
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115
Ohm
Package: DFN2X2-6L
NCE20P05J
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE20P05J
Datasheet (PDF)
..1. Size:732K ncepower
nce20p05j.pdf 
http://www.ncepower.comNCE20P05JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P05J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -
6.1. Size:603K ncepower
nce20p05y.pdf
http://www.ncepower.comNCE20P05YNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20P05Y uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -5ADS DR
7.1. Size:721K ncepower
nce20p08j.pdf
http://www.ncepower.comNCE20P08JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P08J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -
7.2. Size:695K ncepower
nce20p09s.pdf
http://www.ncepower.comNCE20P09SNCE P-Channel Enhancement Mode Power MOSFETD1D2DescriptionThe NCE20P09S uses advanced trench technology to provideG1 G2excellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aS1 S2load switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -9AD
7.3. Size:277K ncepower
nce20p07n.pdf
http://www.ncepower.com NCE20P07NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =
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