NCE20P05J. Аналоги и основные параметры

Наименование производителя: NCE20P05J

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 28 ns

Cossⓘ - Выходная емкость: 140 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm

Тип корпуса: DFN2X2-6L

Аналог (замена) для NCE20P05J

- подборⓘ MOSFET транзистора по параметрам

 

NCE20P05J даташит

 ..1. Size:732K  ncepower
 nce20p05j.pdf pdf_icon

NCE20P05J

http //www.ncepower.com NCE20P05J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P05J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -

 6.1. Size:603K  ncepower
 nce20p05y.pdf pdf_icon

NCE20P05J

http //www.ncepower.com NCE20P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P05Y uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -5A DS D R

 7.1. Size:721K  ncepower
 nce20p08j.pdf pdf_icon

NCE20P05J

http //www.ncepower.com NCE20P08J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P08J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -

 7.2. Size:695K  ncepower
 nce20p09s.pdf pdf_icon

NCE20P05J

http //www.ncepower.com NCE20P09S NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE20P09S uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -9A D

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE2012, NCE2013J, NCE2014ES, NCE2025I, NCE2025S, NCE2030U, NCE2090K, NCE20NP1006S, AON7403, NCE20P05Y, NCE20P07N, NCE20P08J, NCE20P09S, NCE20P10J, NCE20P85GU, NCE2301A, NCE2301B