FQA140N10 Datasheet. Specs and Replacement

Type Designator: FQA140N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO3PN

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FQA140N10 datasheet

 ..1. Size:687K  fairchild semi
fqa140n10.pdf pdf_icon

FQA140N10

September 2000 TM QFET QFET QFET QFET FQA140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 470 pF) This advanced technology has... See More ⇒

 ..2. Size:2504K  onsemi
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FQA140N10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:259K  inchange semiconductor
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FQA140N10

isc N-Channel MOSFET Transistor FQA140N10 FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in audio amplifier, high efficiency switching D... See More ⇒

 9.1. Size:717K  fairchild semi
fqa14n30.pdf pdf_icon

FQA140N10

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 15A, 300V, RDS(on) = 0.29 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been e... See More ⇒

Detailed specifications: FDZ391P, FQA10N80CF109, SDF08N50, FQA11N90F109, FQA11N90CF109, FQA13N50CF, FQA13N80F109, SDF07N80, RFP50N06, SDF07N65, FQA160N08, FQA170N06, FQA19N60, SDF07N50T, FQA24N60, SDF07N50, FQA27N25

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