All MOSFET. NCE20P07N Datasheet

 

NCE20P07N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE20P07N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.8 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23-6L

 NCE20P07N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE20P07N Datasheet (PDF)

 ..1. Size:277K  ncepower
 nce20p07n.pdf

NCE20P07N NCE20P07N

http://www.ncepower.com NCE20P07NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =

 7.1. Size:603K  ncepower
 nce20p05y.pdf

NCE20P07N NCE20P07N

http://www.ncepower.comNCE20P05YNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20P05Y uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -5ADS DR

 7.2. Size:721K  ncepower
 nce20p08j.pdf

NCE20P07N NCE20P07N

http://www.ncepower.comNCE20P08JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P08J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -

 7.3. Size:695K  ncepower
 nce20p09s.pdf

NCE20P07N NCE20P07N

http://www.ncepower.comNCE20P09SNCE P-Channel Enhancement Mode Power MOSFETD1D2DescriptionThe NCE20P09S uses advanced trench technology to provideG1 G2excellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aS1 S2load switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -9AD

 7.4. Size:732K  ncepower
 nce20p05j.pdf

NCE20P07N NCE20P07N

http://www.ncepower.comNCE20P05JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P05J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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