NCE20P07N Specs and Replacement

Type Designator: NCE20P07N

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT23-6L

NCE20P07N substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE20P07N datasheet

 ..1. Size:277K  ncepower
 nce20p07n.pdf pdf_icon

NCE20P07N

http //www.ncepower.com NCE20P07N NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =... See More ⇒

 7.1. Size:603K  ncepower
 nce20p05y.pdf pdf_icon

NCE20P07N

http //www.ncepower.com NCE20P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P05Y uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -5A DS D R ... See More ⇒

 7.2. Size:721K  ncepower
 nce20p08j.pdf pdf_icon

NCE20P07N

http //www.ncepower.com NCE20P08J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P08J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -... See More ⇒

 7.3. Size:695K  ncepower
 nce20p09s.pdf pdf_icon

NCE20P07N

http //www.ncepower.com NCE20P09S NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE20P09S uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -9A D... See More ⇒

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Detailed specifications: NCE2014ES, NCE2025I, NCE2025S, NCE2030U, NCE2090K, NCE20NP1006S, NCE20P05J, NCE20P05Y, EMB04N03H, NCE20P08J, NCE20P09S, NCE20P10J, NCE20P85GU, NCE2301A, NCE2301B, NCE2301C, NCE2301D

Keywords - NCE20P07N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.