FQA160N08 Datasheet and Replacement. Cross Reference Search

FQA160N08 Datasheet (PDF)

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September 2000TMQFETQFETQFETQFETFQA160N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 160A, 80V, RDS(on) = 0.007 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 530 pF)This advanced technology has

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 500V, RDS(on) = 0.32 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been

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QFETFQA16N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.8A, 250V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 68 pF)This advanced technology has been especially tailored to F

Datasheet: SDF08N50 , FQA11N90F109 , FQA11N90CF109 , FQA13N50CF , FQA13N80F109 , SDF07N80 , FQA140N10 , SDF07N65 , 20N50 , FQA170N06 , FQA19N60 , SDF07N50T , FQA24N60 , SDF07N50 , FQA27N25 , FQA28N15 , FQA30N40 .