FQA160N08 PDF and Equivalents Search

 

FQA160N08 Specs and Replacement

Type Designator: FQA160N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO3PN

FQA160N08 substitution

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FQA160N08 datasheet

 ..1. Size:781K  fairchild semi
fqa160n08.pdf pdf_icon

FQA160N08

September 2000 TM QFET QFET QFET QFET FQA160N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 160A, 80V, RDS(on) = 0.007 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 530 pF) This advanced technology has ... See More ⇒

 ..2. Size:2434K  onsemi
fqa160n08.pdf pdf_icon

FQA160N08

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:749K  fairchild semi
fqa16n50.pdf pdf_icon

FQA160N08

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 500V, RDS(on) = 0.32 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been ... See More ⇒

 9.2. Size:869K  fairchild semi
fqa16n25c.pdf pdf_icon

FQA160N08

QFET FQA16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.8A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to F... See More ⇒

Detailed specifications: SDF08N50, FQA11N90F109, FQA11N90CF109, FQA13N50CF, FQA13N80F109, SDF07N80, FQA140N10, SDF07N65, CS150N03A8, FQA170N06, FQA19N60, SDF07N50T, FQA24N60, SDF07N50, FQA27N25, FQA28N15, FQA30N40

Keywords - FQA160N08 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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