All MOSFET. FQA160N08 Datasheet

 

FQA160N08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA160N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 225 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO3PN

 FQA160N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA160N08 Datasheet (PDF)

 ..1. Size:781K  fairchild semi
 fqa160n08.pdf

FQA160N08 FQA160N08

September 2000TMQFETQFETQFETQFETFQA160N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 160A, 80V, RDS(on) = 0.007 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 530 pF)This advanced technology has

 ..2. Size:2434K  onsemi
 fqa160n08.pdf

FQA160N08 FQA160N08

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:749K  fairchild semi
 fqa16n50.pdf

FQA160N08 FQA160N08

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 500V, RDS(on) = 0.32 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been

 9.2. Size:869K  fairchild semi
 fqa16n25c.pdf

FQA160N08 FQA160N08

QFETFQA16N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.8A, 250V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 68 pF)This advanced technology has been especially tailored to F

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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