NCE3008Y Specs and Replacement

Type Designator: NCE3008Y

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 109.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOT23

NCE3008Y substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE3008Y datasheet

 ..1. Size:308K  ncepower
 nce3008y.pdf pdf_icon

NCE3008Y

http //www.ncepower.com NCE3008Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON) ... See More ⇒

 7.1. Size:268K  ncepower
 nce3008m.pdf pdf_icon

NCE3008Y

Pb Free Product http //www.ncepower.com NCE3008M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic diagram General Feature ... See More ⇒

 7.2. Size:333K  ncepower
 nce3008n.pdf pdf_icon

NCE3008Y

http //www.ncepower.com NCE3008N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON) ... See More ⇒

 7.3. Size:631K  ncepower
 nce3008xm.pdf pdf_icon

NCE3008Y

http //www.ncepower.com NCE3008XM NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008XM uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S General Features V = 30V,I = 8A Schematic diagram ... See More ⇒

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Detailed specifications: NCE2302C, NCE2308X, NCE2312X, NCE2321, NCE2321A, NCE2323, NCE3008N, NCE3008XM, IRF1404, NCE3009S, NCE3013J, NCE3015S, NCE3025G, NCE3030K, NCE3030Q, NCE3040Q, NCE3045G

Keywords - NCE3008Y MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.