NCE3008Y. Аналоги и основные параметры

Наименование производителя: NCE3008Y

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 109.4 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm

Тип корпуса: SOT23

Аналог (замена) для NCE3008Y

- подборⓘ MOSFET транзистора по параметрам

 

NCE3008Y даташит

 ..1. Size:308K  ncepower
 nce3008y.pdf pdf_icon

NCE3008Y

http //www.ncepower.com NCE3008Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 7.1. Size:268K  ncepower
 nce3008m.pdf pdf_icon

NCE3008Y

Pb Free Product http //www.ncepower.com NCE3008M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic diagram General Feature

 7.2. Size:333K  ncepower
 nce3008n.pdf pdf_icon

NCE3008Y

http //www.ncepower.com NCE3008N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 7.3. Size:631K  ncepower
 nce3008xm.pdf pdf_icon

NCE3008Y

http //www.ncepower.com NCE3008XM NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008XM uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S General Features V = 30V,I = 8A Schematic diagram

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE2302C, NCE2308X, NCE2312X, NCE2321, NCE2321A, NCE2323, NCE3008N, NCE3008XM, IRF1404, NCE3009S, NCE3013J, NCE3015S, NCE3025G, NCE3030K, NCE3030Q, NCE3040Q, NCE3045G