NCE3008Y MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE3008Y
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19.4 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 109.4 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
Тип корпуса: SOT23
NCE3008Y Datasheet (PDF)
nce3008y.pdf
http://www.ncepower.com NCE3008YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)
nce3008m.pdf
Pb Free Producthttp://www.ncepower.com NCE3008MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic diagram General Feature
nce3008n.pdf
http://www.ncepower.com NCE3008NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)
nce3008xm.pdf
http://www.ncepower.comNCE3008XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3008XM uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aGBattery protection or in other Switching application.SGeneral Features V = 30V,I = 8A Schematic diagram
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
