NCE3050I Specs and Replacement
Type Designator: NCE3050I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-251
NCE3050I substitution
- MOSFET ⓘ Cross-Reference Search
NCE3050I datasheet
nce3050i.pdf
Pb Free Product http //www.ncepower.com NCE3050I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
nce3050.pdf
Pb Free Product http //www.ncepower.com NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
nce3050k.pdf
Pb Free Product http //www.ncepower.com NCE3050K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
Detailed specifications: NCE3009S, NCE3013J, NCE3015S, NCE3025G, NCE3030K, NCE3030Q, NCE3040Q, NCE3045G, AON6414A, NCE3050KA, NCE3055, NCE3065G, NCE3065Q, NCE3080I, NCE3080L, NCE3085K, NCE30H10BG
Keywords - NCE3050I MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
