NCE3050KA Specs and Replacement

Type Designator: NCE3050KA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-252

NCE3050KA substitution

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NCE3050KA datasheet

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NCE3050KA

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NCE3050KA

Pb Free Product http //www.ncepower.com NCE3050K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒

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NCE3050KA

Pb Free Product http //www.ncepower.com NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒

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NCE3050KA

Pb Free Product http //www.ncepower.com NCE3050I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒

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Detailed specifications: NCE3013J, NCE3015S, NCE3025G, NCE3030K, NCE3030Q, NCE3040Q, NCE3045G, NCE3050I, IRFB4115, NCE3055, NCE3065G, NCE3065Q, NCE3080I, NCE3080L, NCE3085K, NCE30H10BG, NCE30H10G

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs