NCE3050KA
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE3050KA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
TO-252
NCE3050KA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE3050KA
Datasheet (PDF)
..1. Size:372K ncepower
nce3050ka.pdf
Pb Free ProductNCE3050KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
6.1. Size:399K ncepower
nce3050k.pdf
Pb Free Producthttp://www.ncepower.com NCE3050KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
7.1. Size:336K ncepower
nce3050.pdf
Pb Free Producthttp://www.ncepower.com NCE3050NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
7.2. Size:311K ncepower
nce3050i.pdf
Pb Free Producthttp://www.ncepower.com NCE3050INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
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