NCE3065Q Specs and Replacement

Type Designator: NCE3065Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 266 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DFN3X3

NCE3065Q substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE3065Q datasheet

 ..1. Size:723K  ncepower
 nce3065q.pdf pdf_icon

NCE3065Q

http //www.ncepower.com NCE3065Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =4.2m (typical) @ V =10V DS(ON) GS R =6.7m (typical) @ V =4.5V Application DS(ON) GS DC/... See More ⇒

 7.1. Size:664K  ncepower
 nce3065g.pdf pdf_icon

NCE3065Q

http //www.ncepower.com NCE3065G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =5.7m (typical) @ V =10V DS(ON) GS R =7.7m (typical) @ V =4.5V Application DS(ON) GS DC/... See More ⇒

 7.2. Size:429K  ncepower
 nce3065k.pdf pdf_icon

NCE3065Q

http //www.ncepower.com NCE3065K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON) ... See More ⇒

 8.1. Size:833K  ncepower
 nce3068q.pdf pdf_icon

NCE3065Q

http //www.ncepower.com NCE3068Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3068Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =68A DS(ON) DS D used in a wide variety of applications. R =3.5m (max) @ V =10V DS(ON) GS R =6.2m (max) @ V =4.5V Application DS(ON) GS DC/DC Conve... See More ⇒

SHOW MORE

Detailed specifications: NCE3030K, NCE3030Q, NCE3040Q, NCE3045G, NCE3050I, NCE3050KA, NCE3055, NCE3065G, 8205A, NCE3080I, NCE3080L, NCE3085K, NCE30H10BG, NCE30H10G, NCE30H11BG, NCE30H11G, NCE30H12AK

Keywords - NCE3065Q MOSFET specs

 NCE3065Q cross reference

 NCE3065Q equivalent finder

 NCE3065Q pdf lookup

 NCE3065Q substitution

 NCE3065Q replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.