All MOSFET. NCE3065Q Datasheet

 

NCE3065Q Datasheet and Replacement


   Type Designator: NCE3065Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 266 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN3X3
 

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NCE3065Q Datasheet (PDF)

 ..1. Size:723K  ncepower
nce3065q.pdf pdf_icon

NCE3065Q

http://www.ncepower.comNCE3065QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =4.2m (typical) @ V =10VDS(ON) GSR =6.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

 7.1. Size:664K  ncepower
nce3065g.pdf pdf_icon

NCE3065Q

http://www.ncepower.comNCE3065GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =5.7m (typical) @ V =10VDS(ON) GSR =7.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

 7.2. Size:429K  ncepower
nce3065k.pdf pdf_icon

NCE3065Q

http://www.ncepower.com NCE3065KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)

 8.1. Size:833K  ncepower
nce3068q.pdf pdf_icon

NCE3065Q

http://www.ncepower.comNCE3068QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3068Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =68ADS(ON) DS Dused in a wide variety of applications. R =3.5m (max) @ V =10VDS(ON) GSR =6.2m (max) @ V =4.5VApplication DS(ON) GS DC/DC Conve

Datasheet: NCE3030K , NCE3030Q , NCE3040Q , NCE3045G , NCE3050I , NCE3050KA , NCE3055 , NCE3065G , 2SK3878 , NCE3080I , NCE3080L , NCE3085K , NCE30H10BG , NCE30H10G , NCE30H11BG , NCE30H11G , NCE30H12AK .

History: SI5515CDC | SJMN850R80ZF

Keywords - NCE3065Q MOSFET datasheet

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