All MOSFET. NCE30H11G Datasheet

 

NCE30H11G Datasheet and Replacement


   Type Designator: NCE30H11G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 991 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: DFN5X6-8L
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NCE30H11G Datasheet (PDF)

 ..1. Size:371K  ncepower
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NCE30H11G

Pb Free Producthttp://www.ncepower.com NCE30H11GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

 6.1. Size:391K  ncepower
nce30h11bk.pdf pdf_icon

NCE30H11G

NCE30H11BKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4

 6.2. Size:632K  ncepower
nce30h11bg.pdf pdf_icon

NCE30H11G

http://www.ncepower.com NCE30H11BGNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H11BG uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =30V,I =110ADS DR =2.3m (typical) @ V =10VDS(ON) GSR =3.8m (typical) @ V =4.5VDS(ON) GS Excellen

 6.3. Size:384K  ncepower
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NCE30H11G

http://www.ncepower.com NCE30H11KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP80N06S2L-06 | 2SK4096LS | UT8205A | AUIRFP4110 | JCS730R | QM2417C1 | WML11N80M3

Keywords - NCE30H11G MOSFET datasheet

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