NCE30H11G Specs and Replacement

Type Designator: NCE30H11G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 991 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: DFN5X6-8L

NCE30H11G substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE30H11G datasheet

 ..1. Size:371K  ncepower
nce30h11g.pdf pdf_icon

NCE30H11G

Pb Free Product http //www.ncepower.com NCE30H11G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON) ... See More ⇒

 6.1. Size:391K  ncepower
nce30h11bk.pdf pdf_icon

NCE30H11G

NCE30H11BK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4... See More ⇒

 6.2. Size:632K  ncepower
nce30h11bg.pdf pdf_icon

NCE30H11G

http //www.ncepower.com NCE30H11BG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =30V,I =110A DS D R =2.3m (typical) @ V =10V DS(ON) GS R =3.8m (typical) @ V =4.5V DS(ON) GS Excellen... See More ⇒

 6.3. Size:384K  ncepower
nce30h11k.pdf pdf_icon

NCE30H11G

http //www.ncepower.com NCE30H11K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON) ... See More ⇒

Detailed specifications: NCE3065G, NCE3065Q, NCE3080I, NCE3080L, NCE3085K, NCE30H10BG, NCE30H10G, NCE30H11BG, STP75NF75, NCE30H12AK, NCE30H15B, NCE30H15BG, NCE30H15BK, NCE30H33LL, NCE30ND35Q, NCE30NP1812G, NCE30NP1812Q

Keywords - NCE30H11G MOSFET specs

 NCE30H11G cross reference

 NCE30H11G equivalent finder

 NCE30H11G pdf lookup

 NCE30H11G substitution

 NCE30H11G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.