Справочник MOSFET. NCE30H11G

 

NCE30H11G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE30H11G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 140 nC
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 991 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для NCE30H11G

 

 

NCE30H11G Datasheet (PDF)

 ..1. Size:371K  ncepower
 nce30h11g.pdf

NCE30H11G NCE30H11G

Pb Free Producthttp://www.ncepower.com NCE30H11GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

 6.1. Size:391K  ncepower
 nce30h11bk.pdf

NCE30H11G NCE30H11G

NCE30H11BKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4

 6.2. Size:632K  ncepower
 nce30h11bg.pdf

NCE30H11G NCE30H11G

http://www.ncepower.com NCE30H11BGNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H11BG uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =30V,I =110ADS DR =2.3m (typical) @ V =10VDS(ON) GSR =3.8m (typical) @ V =4.5VDS(ON) GS Excellen

 6.3. Size:384K  ncepower
 nce30h11k.pdf

NCE30H11G NCE30H11G

http://www.ncepower.com NCE30H11KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)

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