All MOSFET. NCE30P25BQ Datasheet

 

NCE30P25BQ MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE30P25BQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42.8 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN3.3X3.3-8L

 NCE30P25BQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE30P25BQ Datasheet (PDF)

 ..1. Size:735K  ncepower
 nce30p25bq.pdf

NCE30P25BQ NCE30P25BQ

http://www.ncepower.comNCE30P25BQNCE P-Channel Enhancement Mode Power MOSFETGeneral Features V = -30V,I = -25ADS DDescriptionR

 6.1. Size:334K  ncepower
 nce30p25s.pdf

NCE30P25BQ NCE30P25BQ

Pb Free Producthttp://www.ncepower.com NCE30P25SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

 6.2. Size:682K  ncepower
 nce30p25q.pdf

NCE30P25BQ NCE30P25BQ

http://www.ncepower.com NCE30P25QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -25A RDS(ON)

 7.1. Size:256K  ncepower
 nce30p28q.pdf

NCE30P25BQ NCE30P25BQ

http://www.ncepower.com NCE30P28QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON)

 7.2. Size:345K  ncepower
 nce30p20q.pdf

NCE30P25BQ NCE30P25BQ

http://www.ncepower.com NCE30P20QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -20A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE40H12A | SSF7N80A | RJK0631JPD | FHD5N65B | SSA50R240S | HSU60N02 | STP130NH02L

 

 
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