NCE3401A MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE3401A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.5 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT-23
NCE3401A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE3401A Datasheet (PDF)
nce3401a.pdf
Pb Free Producthttp://www.ncepower.com NCE3401ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.4A Schematic
nce3401ay.pdf
Pb Free Producthttp://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30
nce3401ay.pdf
http://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD
nce3401.pdf
Pb Free Producthttp://www.ncepower.com NCE3401NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID
nce3401by.pdf
http://www.ncepower.com NCE3401BYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD
nce3401y.pdf
Pb Free Producthttp://www.ncepower.com NCE3401YNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3401Y uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,
nce3401e.pdf
Pb Free Producthttp://www.ncepower.comNCE3401ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3401E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.It is ESD protested.General Features V = -30V,I = -4.4ADS D
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