NCE3401Y MOSFET Datasheet: P-Ch, 30V, 4.2A. Full specification with pinout and replacement list

NCE3401Y Specs and Replacement

   Type Designator: NCE3401Y
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT-23

NCE3401Y substitution

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NCE3401Y datasheet

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Pb Free Product http //www.ncepower.com NCE3401Y NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE3401Y uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,... See More ⇒

7.1. Size:249K 1
nce3401ay.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30... See More ⇒

7.2. Size:248K ncepower
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Pb Free Product http //www.ncepower.com NCE3401A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features VDS = -30V,ID = -4.4A Schematic... See More ⇒

7.3. Size:241K ncepower
nce3401.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE3401 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID... See More ⇒