NCE3N170F Specs and Replacement

Type Designator: NCE3N170F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-220F

NCE3N170F substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE3N170F datasheet

 ..1. Size:625K  ncepower
 nce3n170f.pdf pdf_icon

NCE3N170F

NCE3N170F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 6.1. Size:635K  ncepower
 nce3n170d.pdf pdf_icon

NCE3N170F

NCE3N170D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 6.2. Size:643K  ncepower
 nce3n170t.pdf pdf_icon

NCE3N170F

NCE3N170T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 6.3. Size:664K  ncepower
 nce3n170pf.pdf pdf_icon

NCE3N170F

NCE3N170PF N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched application... See More ⇒

SHOW MORE

Detailed specifications: NCE3420X, NCE3N150, NCE3N150D, NCE3N150F, NCE3N150PF, NCE3N150T, NCE3N170, NCE3N170D, 75N75, NCE3N170PF, NCE3N170T, NCE4003, NCE4005, NCE4015S, NCE4090G, NCE4090K, NCE40H10K

Keywords - NCE3N170F MOSFET specs

 NCE3N170F cross reference

 NCE3N170F equivalent finder

 NCE3N170F pdf lookup

 NCE3N170F substitution

 NCE3N170F replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs