NCE40P30K Datasheet. Specs and Replacement

Type Designator: NCE40P30K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 212 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO252

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NCE40P30K substitution

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NCE40P30K datasheet

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NCE40P30K

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 8.1. Size:397K  ncepower
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NCE40P30K

Pb Free Product http //www.ncepower.com NCE40P70K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON) ... See More ⇒

 8.2. Size:294K  ncepower
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NCE40P30K

Pb Free Product http //www.ncepower.com NCE40P40D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON) ... See More ⇒

 8.3. Size:470K  ncepower
nce40p40k.pdf pdf_icon

NCE40P30K

Pb Free Product http //www.ncepower.com NCE40P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: NCE40H32LL, NCE40NP2815G, NCE40P06J, NCE40P06S, NCE40P15Q, NCE40P20Q, NCE40P20Q1, NCE40P25G, AOD4184A, NCE40P40D, NCE4435B, NCE4435X, NCE4525, NCE4528K, NCE4555K, NCE4558K, NCE4606B

Keywords - NCE40P30K MOSFET specs

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